High domain wall magneto-resistance in amorphous TbFeCo wires.

By introducing artificial pinning sites to locally modify coercivity in perpendicularly magnetized TbFeCo wires, strip domains were constructed without expense of specimen damage. The construction of strip domains with well-defined shape and controllable number enables a determination of magneto-resistance contributing from singe domain wall. Contrast to crystalline materials, a rather high domain wall magneto-resistance ratio near 20% was found at room temperature, indicating the amorphous TbFeCo is a potential candidate for spintronic devices. [ABSTRACT FROM AUTHOR]