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The Effects of Grain Boundaries in the Electrical Characteristics of Large Grain Polycrystalline Thin-Film Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Aug2002, Vol. 49 Issue 8, p1384. 7p. 3 Black and White Photographs, 1 Diagram, 10 Graphs. - Publication Year :
- 2002
-
Abstract
- Provides information on a study which fabricated thin-film transistors using the nickel-seeded metal-induced lateral crystallization (MILC) technique. Overview of the nickel-seeded MILC; Device fabrication process; Experimental results and discussion; Design guideline to reduce the grain boundary effect.
- Subjects :
- *THIN film transistors
*CRYSTALLIZATION
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 7107653
- Full Text :
- https://doi.org/10.1109/TED.2002.801302