An Empirical Model to Determine the Grain Size of Metal-Induced Lateral Crystallized Film.

Provides information on a study which fabricated thin-film transistors using the nickel-seeded metal-induced lateral crystallization (MILC) in which an amorphous silicon is crystallized to form a large grain polysilicon film. Description of the MILC process; Mobility models of solid phase crystallization and MILC devices; Experimental results and discussion.