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Inelastic tunneling characteristics of AlAs/GaAs heterojunctions.
- Source :
-
Applied Physics Letters . 1984, Vol. 44 Issue 5, p532-534. 3p. - Publication Year :
- 1984
-
Abstract
- We report the first observation of inelastic tunneling in electronic transport perpendicular to a thin AlAs layer sandwiched between two GaAs layers. Temperature dependent I-V, first derivative (dI/dV), and second derivative (d2I/dV2) measurements were made on AlAs/GaAs double heterojunctions for a range of AlAs layer thicknesses and dopings. For p-type AlAs barriers current transport at 4.2 K was due to tunneling, and reproducible structure was seen in the second derivative spectrum. This structure was associated with the inelastic excitation of AlAs optical phonons and with a density-of-states effect caused by optical phonon-electron coupling in the GaAs. A different second derivative spectrum which also exhibited reproducible structure was obtained for n-type AlAs layers. Several possible explanations for these differences are proposed. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM tunneling
*GALLIUM arsenide
*HETEROJUNCTIONS
*PHONONS
*MATHEMATICAL models
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 44
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71380174
- Full Text :
- https://doi.org/10.1063/1.94828