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MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications.
- Source :
-
International Journal of High Speed Electronics & Systems . Sep2001, Vol. 11 Issue 3, p849. 38p. - Publication Year :
- 2001
-
Abstract
- We review the development of the anode hole injection (AHI) model for reliability projection of the silicon dioxide gate dielectric. The experimental and theoretical foundation of the AHI model is presented. Recent development and implications for the reliability of ultra-thin oxides are discussed. AHI is used to illuminate the questions of E versus 1/E models and field-driven versus voltage-driven models. Building on the concept of effective thinning, the AHI model is applied for the interpretation of defect-induced breakdown data and for optimizing oxide screening conditions. Circuit level reliability projection as a function of operating time, temperature, and power supply voltage is also illustrated. [ABSTRACT FROM AUTHOR]
- Subjects :
- *METAL oxide semiconductor field-effect transistors
*ANODES
Subjects
Details
- Language :
- English
- ISSN :
- 01291564
- Volume :
- 11
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- International Journal of High Speed Electronics & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 7144803
- Full Text :
- https://doi.org/10.1142/S0129156401001015