Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying.

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46-3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs. [ABSTRACT FROM AUTHOR]