Back to Search
Start Over
Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces.
- Source :
-
IEEE Transactions on Electron Devices . Feb2012, Vol. 59 Issue 2, p342-348. 7p. - Publication Year :
- 2012
-
Abstract
- This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (\HfO2) and aluminum oxide (\Al2\O3) layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal–oxide–semiconductor model and results from capacitance–voltage measurements, the density of fixed charges (Nf) and the density of interface traps (Dit) at the \HfO2\/\Si and \Al2\O3\/\Si interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 59
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 71539078
- Full Text :
- https://doi.org/10.1109/TED.2011.2176943