Memory switching properties of e-beam evaporated SiOx on N++ Si substrate.

The resistive switching between high impedance ('off' state) and low impedance ('on' state) is demonstrated on e-beam evaporated SiOx/Si resistive random access memory devices in this paper. The set and reset voltages are independent of the device perimeters and oxide thicknesses after electroforming. A circuit model including filament conductance G is proposed to explain the measured 'on' state capacitances under frequency ranges from 1 KHz to 1 MHz. The electrochemical redox process is adopted to explain the formation of Si filament during electroforming and switching. 'On' and 'off' currents were also measured at various operating temperatures. It is found that both set and reset voltages increase as temperature decreases and that no electroforming is exhibited at low temperature T = 77 K. [ABSTRACT FROM AUTHOR]