Intrinsic photoconductivity in chromium disilicide epitaxial thin films.

Authors :: Galkin, N. G.
Konchenko, A. V.
Maslov, A. M.
Source :: Semiconductors. Aug97, Vol. 31 Issue 8, p826. 3p.
Publication Year :: 1997
Abstract: Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on singlelayer silicon substrates have been studied in the photon energy range 0.5 - 1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV corresponds to the third direct interband transition in chromium disilicide at 0.9 - 0.95 eV. Possible reasons for the weak photoconductivity signal in the region of the fundamental absorption edge are analyzed. [ABSTRACT FROM AUTHOR]