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Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal-oxide-semiconductor capacitors.
- Source :
-
Journal of Applied Physics . Mar2012, Vol. 111 Issue 5, p054102. 5p. 8 Graphs. - Publication Year :
- 2012
-
Abstract
- We use an improved AC conductance method and a modified Gray-Brown method to study fast interface traps and slow border traps in Ge-based MOS capacitors. The combined methods provide the corrected Fermi energy level (E) versus gate voltage (Vg) relationship, even in samples with high densities of traps that cause significant C-V distortion, the energy distribution of interface traps, their capture cross sections (σ), as well as slow border traps. A wide range of σ's in p-type Ge is found, indicating that there is more than one type of interface trap near the Ge valence band edge. In contrast, a constant σ near the Ge conduction band edge is observed in n-type Ge. XPS results indicate that Ge suboxides near the interface are accountable for the detected slow border traps. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTORS
*CONDUCTION bands
*OXIDES
*CAPACITORS
*ELECTRIC conductivity
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 111
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 73444056
- Full Text :
- https://doi.org/10.1063/1.3691898