Cite
New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer.
MLA
Zhang Xian-Jun, et al. “New 4H Silicon Carbide Metal Semiconductor Field-Effect Transistor with a Buffer Layer between the Gate and the Channel Layer.” Chinese Physics B, vol. 21, no. 1, Jan. 2012, pp. 1–7. EBSCOhost, https://doi.org/10.1088/1674-1056/21/1/017201.
APA
Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chen Bin, Chai Chang-Chun, & Song Kun. (2012). New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer. Chinese Physics B, 21(1), 1–7. https://doi.org/10.1088/1674-1056/21/1/017201
Chicago
Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chen Bin, Chai Chang-Chun, and Song Kun. 2012. “New 4H Silicon Carbide Metal Semiconductor Field-Effect Transistor with a Buffer Layer between the Gate and the Channel Layer.” Chinese Physics B 21 (1): 1–7. doi:10.1088/1674-1056/21/1/017201.