Cite
Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor.
MLA
Zhang Xian-Jun, et al. “Modeling of the Drain-Induced Barrier Lowering Effect and Optimization for a Dual-Channel 4H Silicon Carbide Metal Semiconductor Field Effect Transistor.” Chinese Physics B, vol. 21, no. 3, Mar. 2012, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/21/3/037303.
APA
Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chai Chang-Chun, Song Kun, & Chen Bin. (2012). Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor. Chinese Physics B, 21(3), 1–5. https://doi.org/10.1088/1674-1056/21/3/037303
Chicago
Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chai Chang-Chun, Song Kun, and Chen Bin. 2012. “Modeling of the Drain-Induced Barrier Lowering Effect and Optimization for a Dual-Channel 4H Silicon Carbide Metal Semiconductor Field Effect Transistor.” Chinese Physics B 21 (3): 1–5. doi:10.1088/1674-1056/21/3/037303.