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Raman sensitivity to crystal structure in InAs nanowires.
- Source :
-
Applied Physics Letters . 4/2/2012, Vol. 100 Issue 14, p143101. 3p. 1 Color Photograph, 2 Graphs. - Publication Year :
- 2012
-
Abstract
- We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge as a non-invasive method to study polytypism in such nanowires. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 74088698
- Full Text :
- https://doi.org/10.1063/1.3698115