Semipolar [formula] InGaN/GaN ridge quantum wells (n = 1-3) fabricated by a regrowth technique.

Semipolar [formula] InGaN/GaN quantum wells (QWs) (n = 1-3) are fabricated on top of GaN microstructures, which consist of semipolar [formula] facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on [formula] facets, [formula] ridge QWs show an intense emission at ∼440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n<OVERLINE>n</OVERLINE>01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1<OVERLINE>1</OVERLINE>01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%. [ABSTRACT FROM AUTHOR]