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Relaxation dynamics of ionic liquid-VO2 interfaces and influence in electric double-layer transistors.
- Source :
-
Journal of Applied Physics . Apr2012, Vol. 111 Issue 8, p084508. 7p. 1 Color Photograph, 1 Diagram, 6 Graphs. - Publication Year :
- 2012
-
Abstract
- Oxide semiconductor systems are often electrostatically doped with ionic liquids as gate insulators towards modulating carrier density and inducing phase transitions, while simultaneously serving as a means to probe their electronic phase diagram. The electronic and electrochemical properties of ionic liquid/correlated oxide interfaces are, therefore, important in interpreting such field-effect phenomena. Here, we use DEME-TFSI and VO2 as a model system to investigate the interface properties, slow relaxations, as well as field-effect in electric double layer transistor geometry. The stability of these interfaces is probed by combination of current-voltage measurements, x-ray photoelectron spectroscopy, impedance spectroscopy, and constant current charging. Three-terminal field effect transistor-type devices fabricated by photolithography are used to investigate kinetics of channel resistance modulations under varying gate bias polarity. Bias regions for reversible modulation of channel conductance have been determined. A time-dependent transconductance effect and as large as 20× increase in conductance are observed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 111
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 74668473
- Full Text :
- https://doi.org/10.1063/1.4704689