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Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Mar2011, Vol. 83 Issue 12, p121304.1-121304.4. 4p. - Publication Year :
- 2011
-
Abstract
- The spin dependence of the photoelectron tunnel current from free-standing GaAs films into out-of-plane magnetized cobalt films is demonstrated. The measured spin asymmetry (A), resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron-spin polarization that results from a reduction in the GaAs surface-recombination velocity. The sign of A changes with that of the cobalt magnetization. In contrast, A is negligible on nonmagnetic gold films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 83
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 74739153
- Full Text :
- https://doi.org/10.1103/PhysRevB.83.121304