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Te-based chalcogenide films with high thermal stability for phase change memory.
- Source :
-
Journal of Applied Physics . May2012, Vol. 111 Issue 9, p093514-093514-5. 1p. - Publication Year :
- 2012
-
Abstract
- This study reports on the synthesis of tellurium-based chalcogenide films that have high thermal stability for phase change memory application. Several Te-based chalcogenide alloys of In-Bi-Te, Ag-Bi-Te, In-Sb-Te, Sn-Sb-Te, Zn-Ge-Te, and Ga-Ge-Te are reported. Their thermal, optical, and electrical properties are investigated. The results show that Bi-Te-based films have a higher crystallization temperature and greater activation energy compared with the other Sb-Te-based and Ge-Te-based films. Especially, In2.8Bi36.6Te60.6 film exhibits high crystallization temperature (252 °C) and great activation energy (5.16 eV), showing much improved amorphous thermal stability. A relatively wider optical band gap (0.674 eV) of thermal annealed In2.8Bi36.6Te60.6 film is obtained. In addition, it also has a higher amorphous/crystalline resistance ratio of about 105, implying that current consumption could be low in the phase-change memory operation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 111
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 75230975
- Full Text :
- https://doi.org/10.1063/1.4711069