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Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O[sub 3] thin films on bottom-Pt-electrode thickness.
- Source :
-
Applied Physics Letters . 10/21/2002, Vol. 81 Issue 17, p3224. 3p. 4 Graphs. - Publication Year :
- 2002
-
Abstract
- Pb(Zr, Ti)O[sub 3] (PZT) thin films were deposited on Pt/Ti and Pt/IrO[sub 2] electrode stacks with various Pt thicknesses (30-200 nm) by a sol-gel process. The sputter-deposited Pt films showed a (111)-preferred texture irrespective of the thickness. However, a high-resolution x-ray diffraction study of the Pt films showed that the films were composed of three kinds of grains with slightly different lattice parameters. The grains with a bulk-like lattice parameter grew with increasing Pt thickness, which was accompanied with an improvement in the crystalline quality. Accordingly, the crystallization and ferroelectric behavior of the 100-nm-thick PZT films improved with increasing Pt film thickness. However, the PZT films on the Pt/IrO[sub 2] electrode showed a deteriorated ferroelectric performance due to the outward diffusion of the Ir (O) onto the Pt surface, which increases the depolarizing field and amount of charge injection by the formation of a conducting phase. [ABSTRACT FROM AUTHOR]
- Subjects :
- *LEAD oxides
*THIN films
*FERROELECTRICITY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 81
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7532283
- Full Text :
- https://doi.org/10.1063/1.1516830