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Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Mar2012, Vol. 85 Issue 10, p1-9. 9p. - Publication Year :
- 2012
-
Abstract
- The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3-90 K. We found that the small-energy-transfer electron-electron (e-e) scattering process dominated the dephasing from a few kelvins to several tens of kelvins. At higher temperatures, a crossover to the large-energy-transfer e-e scattering process was observed. Below about 1 to 2 K, the dephasing time &tgr;ϕ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant D, i.e., &tgr;ϕ(T ≈ 0.3 K) ∝ 1 /D. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 85
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 76153882
- Full Text :
- https://doi.org/10.1103/PhysRevB.85.104204