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Dislocation dynamics during the growth of silicon ribbon.

Authors :
Dillon, O. W.
Tsai, C. T.
De Angelis, R. J.
Source :
Journal of Applied Physics. 9/1/1986, Vol. 60 Issue 5, p1784. 9p. 3 Charts, 18 Graphs.
Publication Year :
1986

Abstract

Examines the thermal viscoplastic stresses and the dislocation densities in silicon ribbon, using an iterative finite difference method. Description of the Haasen-Sumino material model; Factors that affect the mechanical behavior of silicon crystals; Information on the general constitutive equation for silicon; Details of the variations of the elastic and viscoplastic thermal stresses along the center line of the ribbon.

Details

Language :
English
ISSN :
00218979
Volume :
60
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7621544
Full Text :
https://doi.org/10.1063/1.337221