Growth of BaF2 and of BaF2/SrF2 layers on (001)-oriented GaAs.

Examines the epitaxial growth of barium fluoride on oriented gallium arsenide substrates as well as on thin intermediate oriented strontium-fluoride buffers. Use of in situ reflection high-energy electron diffraction and x-ray diffraction; Findings of thickness measurements of cleaved films using a scanning electron microscope; Means to determine directly the amount of misfit in the stacked barium-fluoride/strontium-fluoride layers.