Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs.

Discusses a study which investigated hydrogenation effects on silicon- and beryllium-ion-implanted GaAs exposed to the hydrogen plasma. Change in electron mobilities that occurred in the sample hydrogenated for 60 minutes at room temperature; Factor responsible for defect and impurity passivation in crystalline semiconductor materials; Reasons for not utilizing atomic hydrogen processing.