Energy of arrays of nonperiodic interacting dislocations in semiconductor strained epilayers: Implications for strain relaxation.

Focuses on a study which detailed the calculation of the interaction energy of arrays of dislocations with nonperiodic distribution. Reason for conducting the calculations; Focus of studies on strain relaxation in pseudomorphic epilayers; Situation in which the calculated rate of strain relaxation on annealing the metastable layers at higher temperatures is increased.