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Generation and minority-carrier leakage along GaAs surfaces.

Authors :
Mayer, T. S.
Ling, Z. G.
Cooper, J. A.
Melloch, M. R.
Source :
Journal of Applied Physics. 2/15/1994, Vol. 75 Issue 4, p2098. 7p. 6 Diagrams, 1 Chart, 2 Graphs.
Publication Year :
1994

Abstract

Presents a study that described electrical measurement on exposed surfaces of n- and p-type gallium arsenide. Features of the n-type surface; Features of the p-type gallium arsenide; Significance of the findings for gallium arsenide devices.

Subjects

Subjects :
*ELECTRICITY
*GALLIUM arsenide

Details

Language :
English
ISSN :
00218979
Volume :
75
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7629909
Full Text :
https://doi.org/10.1063/1.356997
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