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Quantum yield of electron impact ionization in silicon.
- Source :
-
Journal of Applied Physics . 1/15/1985, Vol. 57 Issue 2, p302. 8p. 6 Diagrams, 11 Graphs. - Publication Year :
- 1985
-
Abstract
- Provides information on a study that focused on the use of p-channel silicon-gate metal-oxide semiconductor transistors for the examination of quantum yield of electron impact ionization in silicon. Way of injecting electrons into silicon from the polysilicon gate; Use of the carrier-separation properties of the induced junction; Examples of hot-carrier effects.
- Subjects :
- *METAL oxide semiconductors
*SILICON
*IONIZATION (Atomic physics)
*ELECTRONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 57
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7630114
- Full Text :
- https://doi.org/10.1063/1.334804