Back to Search
Start Over
Formation of amorphous layers by ion implantation.
- Source :
-
Journal of Applied Physics . 1/15/1985, Vol. 57 Issue 2, p180. 6p. 1 Chart, 4 Graphs. - Publication Year :
- 1985
-
Abstract
- Discusses a study that explored the relationship between the implant conditions and the depth and nature of the amorphous layers generated in silicon. Role of amorphous layer morphology; Use of high-dose implants of arsenic, phosphorus and boron; Factors that make it more likely for residual crystal defects to be associated with lower weight ion implant distributions.
- Subjects :
- *AMORPHOUS semiconductors
*SILICON
*MORPHOLOGY
*ARSENIC
*PHOSPHORUS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 57
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7630150
- Full Text :
- https://doi.org/10.1063/1.334840