Depth profile and thermal annealing behavior of Bi implanted into an Al/Ti bilayer structure.

Authors :: Olivieri, C. A.
Behar, M.
Fichtner, P. F. P.
Zawislak, F. C.
Fink, D.
Biersack, J. P.
Source :: Journal of Applied Physics. 7/15/1985, Vol. 58 Issue 2, p659. 4p. 5 Graphs.
Publication Year :: 1985
Abstract: Focuses on a study which detailed the depth profile and thermal annealing behavior of bismuth implanted into an Al/Ti bilayer structure. Factor that acts as a diffusion barrier for bismuth; Motive for performing ion implantation; Cause of the discontinuous change in the implanted range profile at the interface.

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