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Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing.

Authors :
Pearton, S. J.
Caruso, R.
Source :
Journal of Applied Physics. 7/15/1989, Vol. 66 Issue 2, p663. 3p.
Publication Year :
1989

Abstract

Presents a study which shown repaid thermal annealing of gallium arsenide with an enclosed, SiC-coated graphic susceptor to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to more conventional proximity method. Comparison of the surface protection capabilities of the method with conventional proximity annealing; Experimental procedures; Results and discussion; Conclusion.

Details

Language :
English
ISSN :
00218979
Volume :
66
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7632090
Full Text :
https://doi.org/10.1063/1.343534