Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing.

Presents a study which shown repaid thermal annealing of gallium arsenide with an enclosed, SiC-coated graphic susceptor to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to more conventional proximity method. Comparison of the surface protection capabilities of the method with conventional proximity annealing; Experimental procedures; Results and discussion; Conclusion.