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Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Jun2012 Part 2 Part 2, Vol. 60 Issue 6, p1870-1877. 8p. - Publication Year :
- 2012
-
Abstract
- The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push–pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 60
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 76329383
- Full Text :
- https://doi.org/10.1109/TMTT.2012.2193593