Back to Search
Start Over
A Nested-Reactance Feedback Power Amplifier for Q-Band Applications.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Jun2012 Part 1 Part 1, Vol. 60 Issue 6, p1667-1675. 9p. - Publication Year :
- 2012
-
Abstract
- A power amplifier (PA) topology is presented that incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The PA is fabricated in a 120-nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power-added efficiency of 20% at 38 GHz. This is the highest reported output power from a single PA at Q-band in silicon. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 60
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 76329421
- Full Text :
- https://doi.org/10.1109/TMTT.2012.2190751