Native defect related inhomogeneity in characteristics of GaAs field-effect transistors fabricated on annealed dislocation-free substrates.

Investigates the native defect related inhomogeneity in characteristics of gallium arsenide (GaAs) field-effect transistors fabricated on annealed dislocation-free substrates. Substrate characteristics affecting the uniformity in the threshold voltage of field-effect transistors; Method used to make the undoped semi-insulating GaAs crystals grow; Ionized defects that could affect the electrical properties.