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Defect states in 2.0-MeV electron-irradiated phosphorus-doped silicon.

Authors :
Awadelkarim, O. O.
Monemar, B.
Source :
Journal of Applied Physics. 6/15/1989, Vol. 65 Issue 12, p4779. 10p.
Publication Year :
1989

Abstract

Focuses on a study that investigated the influence of phosphorus in the defect formation in irradiated n-silicon using deep-level transient spectroscopy. Background of experimental techniques; Experimental details; Results; Discussion; Conclusions.

Subjects

Subjects :
*PHOSPHORUS
*SILICON
*DEEP level transient spectroscopy

Details

Language :
English
ISSN :
00218979
Volume :
65
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7633387
Full Text :
https://doi.org/10.1063/1.343232
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