Uniaxial stress effects on the AlAs/GaAs double-barrier heterostructures.

Authors :: Lu, S. S.
Meng, C. C.
Williamson, F.
Nathan, M. I.
Source :: Journal of Applied Physics. 6/15/1991, Vol. 69 Issue 12, p8241. 6p. 1 Diagram, 1 Chart, 7 Graphs.
Publication Year :: 1991
Abstract: Deals with a study which measured the current-voltage characteristics of gallium arsenide (GaAs)-aluminum arsenide (AlAs)-GaAs-AlAs-GaAs double-barrier heterostructures grown by molecular beam epitaxy on oriented substrates under longitudinal uniaxial stress. Preparation of sample and experimental technique; Current-voltage characteristics of the resonant tunneling diode; Description of the I-V characteristics of the heterostructures.