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Capacitance-voltage characteristics of grain boundaries in cast polycrystalline silicon.
- Source :
-
Journal of Applied Physics . 6/15/1991, Vol. 69 Issue 12, p8217. 5p. 1 Diagram, 1 Chart, 6 Graphs. - Publication Year :
- 1991
-
Abstract
- Details a study which measured the capacitance-voltage of grain boundaries made on cast polycrystalline silicon wafers. Description of the experimental grain boundary capacitance-voltage curves; Calculation of capacitance-voltage curves; Results and discussion.
- Subjects :
- *ELECTRIC capacity
*SEMICONDUCTOR wafers
*CRYSTAL grain boundaries
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7633483
- Full Text :
- https://doi.org/10.1063/1.347425