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A promising sputtering route for one-step fabrication of chalcopyrite phase Cu(In,Ga)Se2 absorbers without extra Se supply
- Source :
-
Solar Energy Materials & Solar Cells . Aug2012, Vol. 103, p25-29. 5p. - Publication Year :
- 2012
-
Abstract
- Abstract: One-step fabrication of the chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layer without excess Se supply during/after deposition or post-selenization treatments is reported. By using pulse DC sputtering from a single quaternary CIGS target, the chalcopyrite structure is spontaneously developed on the substrate at 500°C even without extra Se supply. The obtained CIGS absorber layer possesses columnar grains with (112) preferred orientation. Device efficiency of 8.22% is observed for slightly Se-deficient CIGS films. By further tuning the target composition, the efficiency is enhanced to 10.14%. We demonstrate that the device-quality CIGS absorber can be formed even in the Se-deficient environment and further improvement of efficiency can be achieved by tuning the Se content of the target. Accordingly, our one-step sputtering process shows great potential for mass production of thin film CIGS solar cells with a low cost and a high throughput. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 09270248
- Volume :
- 103
- Database :
- Academic Search Index
- Journal :
- Solar Energy Materials & Solar Cells
- Publication Type :
- Academic Journal
- Accession number :
- 76335081
- Full Text :
- https://doi.org/10.1016/j.solmat.2012.04.008