The heteroepitaxial growth of ZnSe on GaP and GaAs substrates.

Presents a study which reported the bypass flow effect on the growth of Zinc sulphide (ZnS) on gallium phosphide (GaP) substrates by the open-tube vapor transport in the hydrogen gas flow. Impact of the bypass flow on the growth of ZnS on GaP; Description of the schematic drawing of the vapor-phase epitaxy system; Details on the substrate temperature dependence of the growth of Zn selenium films on GaP.