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Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells.
- Source :
-
Journal of Applied Physics . 5/15/1992, Vol. 71 Issue 10, p4833. 10p. - Publication Year :
- 1992
-
Abstract
- Presents information on a study which investigated the damage generation and its annealing behavior in gallium arsenide (GaAs)/(Ga,aluminum (Al))As quantum wells (QW) after Ga[⊃+] implantation at room temperature, by transmission electron microscopy. Implantation and annealing of the GaAs/GaAlAs single QW; Discussion on the implantation and annealing of the GaAs/AlAs multiple QW; Differential amorphization and annealing; Segregation of defects in GaAs.
- Subjects :
- *GALLIUM arsenide
*QUANTUM wells
*TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 71
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7634539
- Full Text :
- https://doi.org/10.1063/1.350626