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Modulated reflectance study of strain in epitaxial GaAs on silicon.
- Source :
-
Journal of Applied Physics . 11/15/1989, Vol. 66 Issue 10, p4862. 4p. - Publication Year :
- 1989
-
Abstract
- Deals with a study which examined the nature of the strain in epitaxial layers of gallium arsenide grown by laser-assisted metalorganic chemical vapor deposition on silicon substrate, using the electrolyte electroreflectance technique. Information on heteroepitaxy of gallium arsenide films; Methodology of the study; Results and discussion.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 66
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7636596
- Full Text :
- https://doi.org/10.1063/1.343804