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Optical investigation of highly strained InGaAs-GaAs multiple quantum wells.

Authors :
Ji, G.
Huang, D.
Reddy, U. K.
Henderson, T. S.
Houdré, R.
Morkoç, H.
Source :
Journal of Applied Physics. 10/15/1987, Vol. 62 Issue 8, p3366. 8p. 2 Charts, 9 Graphs.
Publication Year :
1987

Abstract

Provides information on the measurement of low-temperature optical transmission spectra of several indium-gallium-arsenic/gallium arsenide strained multiple quantum wells. Transitions related to the nth conduction and mth valence heavy hole subbands; Application of standard single-band Kronig-Penney model; Energy band configuration for light holes.

Details

Language :
English
ISSN :
00218979
Volume :
62
Issue :
8
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7637394
Full Text :
https://doi.org/10.1063/1.339299