Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures.

Provides information on a study which investigated the lattice damage and the nature of the atomic intermixing of aluminum and gallium induced by As[sup++] implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures. Basis for the photoluminescence spectra; Way that the depth profiles of intermixing were obtained; Techniques that introduce defects; Cause of the reduction of the radiation damage.