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Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure.
- Source :
-
Journal of Applied Physics . 10/15/1994, Vol. 76 Issue 8, p4749. 4p. 1 Chart, 5 Graphs. - Publication Year :
- 1994
-
Abstract
- Provides information on a study that calculated hole mobility in strained Si[sub1-x]Ge[subx]/Si(001) layers as functions of temperature and doping concentrations for various germanium contents using a Monte Carlo technique. Description on the Monte Carlo model; Results and discussion on the study.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 76
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7637949
- Full Text :
- https://doi.org/10.1063/1.357244