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Metal-oxide-semiconductor field-effect-transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability.
- Source :
-
Journal of Applied Physics . 9/15/1994, Vol. 76 Issue 6, p3695. 6p. 2 Diagrams, 10 Graphs. - Publication Year :
- 1994
-
Abstract
- Presents information on a study which investigated the origin of the substrate current of a metal-oxide semiconductor field-effect transistor when the gate oxide undergoes Fowler-Nordheim stress. Experimental details; Results and discussion; Conclusions.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 76
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7638577
- Full Text :
- https://doi.org/10.1063/1.357438