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A slow positron beam study of vacancy formation in fluorine-implanted silicon.
- Source :
-
Journal of Applied Physics . 4/1/1993, Vol. 73 Issue 7, p3242. 4p. 2 Graphs. - Publication Year :
- 1993
-
Abstract
- Discusses the results of a study on vacancy formation in fluorine-implanted silicon using a slow positron beam. Consequence of positron diffusion and the breadth of the positron implantation profile; Implications of the vacancies caused by ion implantation; Techniques used in demonstrating the correlation of defects present and vacancies in silicon.
- Subjects :
- *POSITRON beams
*SILICON
*ION implantation
*SURFACE defects
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641401
- Full Text :
- https://doi.org/10.1063/1.352968