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Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
- Source :
-
Journal of Applied Physics . 8/1/1991, Vol. 70 Issue 3, p1737. 5p. - Publication Year :
- 1991
-
Abstract
- Presents information on a study which analyzed the results of in situ studies of the surface V/III balance using the reflectance-difference (RD) method during vacuum chemical epitaxy of (001) gallium arsenide from arsine and triethylgallium. Experimental method; Adjustment in the experimental parameters; Analysis of the RD signal when growth was effectuated at different V/III ratios.
- Subjects :
- *REFLECTANCE
*EPITAXY
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7641697