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Microvoid nucleation at the interface between a thin film and a substrate in fatigue.

Authors :
Qin, S.
Fan, H.
Mura, T.
Source :
Journal of Applied Physics. 8/1/1991, Vol. 70 Issue 3, p1405. 7p. 4 Diagrams, 4 Graphs.
Publication Year :
1991

Abstract

Presents a study that employed a dislocation dipole model to stimulate the nucleation of microvoids at the interface between a thin film and a substrate. Formulation; Results and discussion; Conclusion.

Subjects

Subjects :
*NUCLEATION
*THIN films

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7641737
Full Text :
https://doi.org/10.1063/1.349549