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Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 K.
- Source :
-
Journal of Applied Physics . 12/1/1989, Vol. 66 Issue 11, p5416. 6p. 1 Diagram, 5 Graphs. - Publication Year :
- 1989
-
Abstract
- Presents a study which measured the electrical resistivity and Hall effect of TiSi[sub2] thin films. Materials and methods used; Description of the temperature dependence of resistivity of TiSi[sub2] thin film; Overview of the Hall effect of TiSi[sub2] thin film formed on single crystal silicon.
- Subjects :
- *THIN films
*HALL effect
*TITANIUM
*SILICIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 66
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7643754
- Full Text :
- https://doi.org/10.1063/1.343689