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Deep-level transient spectroscopy: Increased accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations.
- Source :
-
Journal of Applied Physics . 12/1/1991, Vol. 70 Issue 11, p6915. 12p. 2 Diagrams, 11 Graphs. - Publication Year :
- 1991
-
Abstract
- Studies accuracy of interpretation of silicon/silicon dioxide interface state data by the assistance of computer simulations of deep-level transient spectroscopy. Method of the study; Results and discussion; Conclusion.
- Subjects :
- *SILICON
*SILICA
*INTERFACES (Physical sciences)
*SPECTRUM analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 70
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7644398
- Full Text :
- https://doi.org/10.1063/1.349817