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Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors.
- Source :
-
Applied Physics Letters . 6/4/2012, Vol. 100 Issue 23, p232101. 4p. 4 Graphs. - Publication Year :
- 2012
-
Abstract
- This letter investigates asymmetrical degradation behavior induced by the self-heating effect in InGaZnO thin-film transistors. Both the surrounding oxide and other thermal insulating material, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO thin-film transistors. The heated channel layer enhances threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effect. Moreover, a non-uniform distribution of channel carrier concentration leads to an uneven temperature distribution through the InGaZnO active layer and results in the asymmetrical degradation behavior after self-heating operation. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN film transistors
*THERMAL insulation
*OXIDES
*LIGHT emitting diodes
*ETCHING
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 76447446
- Full Text :
- https://doi.org/10.1063/1.4723573