Back to Search
Start Over
Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells.
- Source :
-
Journal of Applied Physics . 12/1/1992, Vol. 72 Issue 11, p5288. 6p. 1 Diagram, 1 Chart, 5 Graphs. - Publication Year :
- 1992
-
Abstract
- Discusses indium tin oxide (ITO)/silicon oxide/silicon junction solar cells produced by depositing ITO on a thin film silicon oxide-covered single-crystal Si substrate. Use of electron-beam evaporation method; Ways to decrease the amount of the metal indium; Cause of a decrease in the lattice constant of the films.
- Subjects :
- *INDIUM compounds
*SILICON oxide
*SOLAR cells
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7644887
- Full Text :
- https://doi.org/10.1063/1.352013