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Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells.

Authors :
Kobayashi, H.
Ishida, T.
Nakamura, K.
Nakato, Y.
Tsubomura, H.
Source :
Journal of Applied Physics. 12/1/1992, Vol. 72 Issue 11, p5288. 6p. 1 Diagram, 1 Chart, 5 Graphs.
Publication Year :
1992

Abstract

Discusses indium tin oxide (ITO)/silicon oxide/silicon junction solar cells produced by depositing ITO on a thin film silicon oxide-covered single-crystal Si substrate. Use of electron-beam evaporation method; Ways to decrease the amount of the metal indium; Cause of a decrease in the lattice constant of the films.

Details

Language :
English
ISSN :
00218979
Volume :
72
Issue :
11
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7644887
Full Text :
https://doi.org/10.1063/1.352013