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Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps.
- Source :
-
Journal of Applied Physics . 1/1/1989, Vol. 65 Issue 1, p354. 7p. 10 Graphs. - Publication Year :
- 1989
-
Abstract
- Presents information on hot-carrier-induced degradation of metal-oxide-semiconductor filed-effect transistors. Electron and hole trapping and interface-trap generation; Overview of electron-trapping efficiency of the group one device gate oxide; Generation of oxide traps by electron-hole recombination in the oxide.
- Subjects :
- *METAL oxide semiconductor field-effect transistors
*ELECTRONS
*OXIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 65
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7650879
- Full Text :
- https://doi.org/10.1063/1.342548